DocumentCode :
2174711
Title :
Analysis of lateral current spreading in collector of submicron HBT
Author :
Watanabe, Yasuhiro ; Qiu, Wei-Bin ; Miyamot, Yasuyuki ; Furuya, Kazuhito
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol.
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
460
Lastpage :
463
Abstract :
Recently, InP HBTs with submicron emitter showed high cutoff frequency. In this simulation, cutoff frequency when emitter width was around collector thickness is analyzed and possibility of smaller transit time in narrower emitter is pointed out
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; semiconductor device models; InP; InP HBT; current spreading; cutoff frequency; narrower emitter; submicron emitter; transit time; Analytical models; Contact resistance; Current density; Cutoff frequency; Delay estimation; Electrons; Heterojunction bipolar transistors; Indium phosphide; Kirk field collapse effect; Proximity effect;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517531
Filename :
1517531
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174711
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