DocumentCode
2174796
Title
Effect of temperature and substrate misorientation on the surface reaction kinetics of selective area MOVPE
Author
Song, Haizheng ; Song, Xueliang ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Shimogaki, Yukihiro
fYear
2005
fDate
8-12 May 2005
Firstpage
468
Lastpage
471
Abstract
In order to design the selective-area metal-organic vapor phase epitaxy (MOVPE) processes, the surface reaction rate constant of a Ga-precursor was investigated as a function of temperature, substrate misorientation, and the partial pressures of precursors
Keywords
MOCVD; reaction rate constants; surface chemistry; vapour phase epitaxial growth; Ga-precursor; partial pressure; selective area MOVPE; substrate misorientation; surface reaction kinetics; surface reaction rate constant; Dielectric substrates; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Kinetic theory; Materials science and technology; Optical device fabrication; Quantum well devices; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517533
Filename
1517533
Link To Document