Title :
A comparison between heavy silicon and tellurium doping of InP during metalorganic molecular beam epitaxy
Author :
Cohen, S. ; Cytermann, C. ; Ritter, D.
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa
Abstract :
Both silicon and tellurium can be used for ultra high doping of InP. However, while diffusion of Si is slow, Te is shown to be a very fast diffusing atom. Carbon co-incorporation was detected in the silicon doped layers
Keywords :
III-V semiconductors; carbon; chemical beam epitaxial growth; diffusion; indium compounds; semiconductor doping; silicon; tellurium; InP; InP:SiTeC; carbon co-incorporation; diffusion; metalorganic molecular beam epitaxy; silicon doping; tellurium doping; Atomic layer deposition; Carbon dioxide; Degradation; Doping; Double heterojunction bipolar transistors; Heterojunction bipolar transistors; Indium phosphide; Molecular beam epitaxial growth; Silicon; Tellurium;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517535
