DocumentCode :
2174872
Title :
Surface kinetics in MOVPE of InP and InGaP analyzed by flow modulation method
Author :
Nakano, Takayuki ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Shimogaki, Yukihiro
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
479
Lastpage :
482
Abstract :
By the flow modulation growth, we suggest the existence of an intermediate layer at the surface of InP and InGaP during the growth. Its transient behavior was analyzed in connection to the surface segregation phenomena
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; semiconductor growth; surface segregation; vapour phase epitaxial growth; InGaP; InP; MOVPE; flow modulation method growth; surface kinetics; surface segregation phenomena; transient behavior; Atomic layer deposition; Crystallization; Epitaxial growth; Epitaxial layers; Gallium arsenide; Indium phosphide; Kinetic theory; Materials science and technology; Stress; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517536
Filename :
1517536
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2174872
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