• DocumentCode
    2174877
  • Title

    Mo6Se8-based Chevrel phase thermoelectric materials

  • Author

    Ohta, Y. ; Uchida, H. ; Roche, C. ; Tanahashi, H. ; Kasama, A. ; Scherrer, H. ; Scherrer, S.

  • Author_Institution
    Japan Ultra-High Temp. Mater. Res. Inst., Ube, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    258
  • Lastpage
    261
  • Abstract
    Mo6Se8-based Chevrel phase compounds inserted cations into those cavities are interesting as a new kind of PGEC (Phonon Glass Electron Crystal) thermoelectric materials. Ti and Zn are expected to form attractive Chevrel phase thermoelectric compounds by theoretical considerations. In our previous investigation, however, it seems to be difficult that cations insert sufficiently to cavities. In this study, an attempt to increase the amount of inserted Ti by varying preparation conditions is carried out. It is apparent that this trouble is caused by the formation of a TiSe2 secondary phase due to preferential diffusion of Se into Ti, which consequently disturbed the reaction of Mo and Se. Proper heat process and shortening of diffusion distance are effective to distribute inserted Ti-uniformity in Chevrel phase and to decrease secondary phase. According to these analyses, the suitable condition to obtain optimum Chevrel phases, the insert mechanism of cations into the cavities, and the effect of the insertion range of Ti on thermoelectric properties are discussed
  • Keywords
    Seebeck effect; molybdenum compounds; self-diffusion; semiconductor materials; Chevrel phase compounds; Mo6Se8; Seebeck coefficient; diffusion; phonon glass electron crystal; secondary phase; thermoelectric materials; Annealing; Artificial intelligence; Atmosphere; Conducting materials; Conductivity; Plasma temperature; Powders; Scanning electron microscopy; Steel; Thermoelectricity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
  • Conference_Location
    Beijing
  • ISSN
    1094-2734
  • Print_ISBN
    0-7803-7205-0
  • Type

    conf

  • DOI
    10.1109/ICT.2001.979882
  • Filename
    979882