DocumentCode
2174903
Title
Technology transfer of (Ga)InP-quantum dots
Author
Rossbach, R. ; Jetter, M.
Author_Institution
Phys. Inst., Stuttgart Univ.
fYear
2005
fDate
8-12 May 2005
Firstpage
483
Lastpage
486
Abstract
We transferred the technology to grow (Ga)InP quantum dots from a home-built epitaxy MOVPE machine to a commercial machine. We were able to obtain quantum dots in our first runs proven by AFM and time-resolved photoluminescence
Keywords
III-V semiconductors; MOCVD; atomic force microscopy; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; time resolved spectra; vapour phase epitaxial growth; (Ga)InP; (Ga)InP-quantum dot growth; AFM; home-built epitaxy MOVPE machine; technology transfer; time-resolved photoluminescence; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum dot lasers; Quantum dots; Semiconductor laser arrays; Technology transfer; Temperature; US Department of Transportation; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517537
Filename
1517537
Link To Document