Title :
Technology transfer of (Ga)InP-quantum dots
Author :
Rossbach, R. ; Jetter, M.
Author_Institution :
Phys. Inst., Stuttgart Univ.
Abstract :
We transferred the technology to grow (Ga)InP quantum dots from a home-built epitaxy MOVPE machine to a commercial machine. We were able to obtain quantum dots in our first runs proven by AFM and time-resolved photoluminescence
Keywords :
III-V semiconductors; MOCVD; atomic force microscopy; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; time resolved spectra; vapour phase epitaxial growth; (Ga)InP; (Ga)InP-quantum dot growth; AFM; home-built epitaxy MOVPE machine; technology transfer; time-resolved photoluminescence; Epitaxial growth; Epitaxial layers; Indium phosphide; Quantum dot lasers; Quantum dots; Semiconductor laser arrays; Technology transfer; Temperature; US Department of Transportation; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517537
