Interference issues in silicon RFIC design

Author

Zhaofeng Zhang ; Pun, A. ; Lau, J.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1998

fDate

11-8 June 1998

Firstpage

119

Lastpage

122

Abstract

Traditional noise immunity methodologies used in PCB designs are less effective when applied to RFICs. We present here analyses of both electromagnetic interferences and spiral inductor induced substrate noise in silicon RFICs that can be an impediment in achieving higher integration. In the analysis, we (1) compare the effectiveness of 4 shielding solutions in a triple layer metal technology, (2) contrast the interference on both heavily doped and lightly doped substrates, (3) study the impact of physical separation and geometrical variations, (4) and measure the inductor induced substrate noise on a 0.8 /spl mu/m triple-layer CMOS process.

Keywords

CMOS integrated circuits; UHF integrated circuits; crosstalk; electromagnetic interference; electromagnetic shielding; elemental semiconductors; integrated circuit noise; silicon; 0.8 micron; EMI; Si; Si RFIC design; electromagnetic interferences; geometrical variations; heavily doped substrates; lightly doped substrates; noise immunity; physical separation; shielding; spiral inductor induced substrate noise; triple layer metal technology; triple-layer CMOS process; CMOS technology; Electromagnetic analysis; Electromagnetic induction; Electromagnetic interference; Electromagnetic shielding; Impedance; Inductors; Radiofrequency integrated circuits; Silicon; Spirals;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682061

Filename

682061