Title :
Interference issues in silicon RFIC design
Author :
Zhaofeng Zhang ; Pun, A. ; Lau, J.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
Abstract :
Traditional noise immunity methodologies used in PCB designs are less effective when applied to RFICs. We present here analyses of both electromagnetic interferences and spiral inductor induced substrate noise in silicon RFICs that can be an impediment in achieving higher integration. In the analysis, we (1) compare the effectiveness of 4 shielding solutions in a triple layer metal technology, (2) contrast the interference on both heavily doped and lightly doped substrates, (3) study the impact of physical separation and geometrical variations, (4) and measure the inductor induced substrate noise on a 0.8 /spl mu/m triple-layer CMOS process.
Keywords :
CMOS integrated circuits; UHF integrated circuits; crosstalk; electromagnetic interference; electromagnetic shielding; elemental semiconductors; integrated circuit noise; silicon; 0.8 micron; EMI; Si; Si RFIC design; electromagnetic interferences; geometrical variations; heavily doped substrates; lightly doped substrates; noise immunity; physical separation; shielding; spiral inductor induced substrate noise; triple layer metal technology; triple-layer CMOS process; CMOS technology; Electromagnetic analysis; Electromagnetic induction; Electromagnetic interference; Electromagnetic shielding; Impedance; Inductors; Radiofrequency integrated circuits; Silicon; Spirals;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682061
