DocumentCode :
2174976
Title :
Kondo semiconductors as a novel thermoelectric-cooling material
Author :
Takabatake, T. ; Suemitsu, T. ; Sasakawa, T. ; Bando, Y. ; Takagi, T. ; Echizen, Y. ; Yoshino, T. ; Umeo, K. ; Iga, F. ; Sera, M. ; Paul, Ch ; Berger, St ; Bauer, E.
Author_Institution :
Dept. of Quantum Matter, Hiroshima Univ., Japan
fYear :
2001
fDate :
2001
Firstpage :
266
Lastpage :
269
Abstract :
Among rare-earth-based compounds showing the Kondo effect, systems exhibiting a small energy gap in the heavy-electron band are referred to as Kondo semiconductors. We have measured thermoelectric properties of CeNiSn, CeRhSb, CeRhAs, YbB12 and their substituted alloys. The thermopower of CeRhAs has a positive maximum of 130 μV/K at 40 K, while that of YbB12 has a negative peak of -150 μV/K at 10 K. For both CeNiSn and CeRhSb, the electrical resistivity is less than 200 μΩcm and the thermal conductivity is about 50 mW/Kcm at 60 K. The figure of merit Z for CeRhAs and CeRhSb has the maximum value of 1.0×10-3/K at 125 K and 2.2×10-3/K at 13 K, respectively. Therefore, these compounds have high potential for a novel thermoelectric cooling material at low temperatures
Keywords :
Kondo effect; cerium compounds; electrical resistivity; electronic density of states; heavy fermion systems; nickel compounds; rhodium compounds; semiconductor materials; thermal conductivity; thermoelectric power; ytterbium compounds; 10 K; 125 K; 13 K; 40 K; 60 K; CeNiSn; CeRhAs; CeRhSb; Kondo effect; Kondo semiconductors; YbB12; density of states; electrical resistivity; energy gap; figure of merit; heavy electron band; thermal conductivity; thermoelectric cooling material; thermoelectric properties; thermopower; Conducting materials; Cooling; Electric resistance; Electric variables measurement; Electrons; Semiconductor materials; Superconducting materials; Temperature; Thermal conductivity; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
ISSN :
1094-2734
Print_ISBN :
0-7803-7205-0
Type :
conf
DOI :
10.1109/ICT.2001.979884
Filename :
979884
Link To Document :
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