Title :
Multi-4 in. production MBE system review for the growth of mixed P-based heterostructures, for optoelectronic applications
Author :
Wilk, A. ; Godey, S. ; Marcadet, X. ; Gerard, P. ; Mollot, F. ; Chaix, C.
Author_Institution :
RIBER Process Technol. Center, Rueil-Malmaison
Abstract :
MBE-growth conditions of mixed As/P and P-based heterostructures are studied. The objective is to improve their optical and structural characteristics. Growths were performed on multiwafer production system. Successive campaign data and maintenance procedure are presented
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; GaAsP-GaInP; MBE-growth conditions; P-based heterostructures; multiwafer production system; optical characteristics; optoelectronic applications; structural characteristics; Data communication; Indium phosphide; Molecular beam epitaxial growth; Power lasers; Printing; Production systems; Quantum cascade lasers; Quantum well devices; Telecommunications; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517540
