Title :
Post-growth bandgap engineering in InP
Author :
Yanson, D.A. ; Kowalski, O.P. ; McDougall, S.D. ; Marsh, J.H.
Author_Institution :
Intense Ltd., Glasgow
Abstract :
We report novel quantum-well intermixing techniques that allow multiple bandgaps to be generated on a single InP substrate or device. The proposed processes are suitable for the manufacture of monolithically integrated optoelectronic devices and circuits
Keywords :
III-V semiconductors; energy gap; indium compounds; monolithic integrated circuits; semiconductor growth; semiconductor quantum wells; InP; InP device; InP substrate; monolithically integrated optoelectronic circuits; monolithically integrated optoelectronic devices; multiple bandgaps; post-growth bandgap engineering; quantum-well intermixing techniques; Annealing; Gallium arsenide; Indium phosphide; Integrated circuit manufacture; Manufacturing processes; Photonic band gap; Plasma temperature; Silicon compounds; Sputtering; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517543
