• DocumentCode
    2175139
  • Title

    Fabrication of transferred-substrate HBT with simple technology

  • Author

    Topaloglu, S. ; Driesen, J. ; Poloczek, A. ; Tegude, F.J.

  • Author_Institution
    Dept. of Solid State Electron., Univ. Duisburg-Essen, Duisburg
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    508
  • Lastpage
    511
  • Abstract
    In this paper, transferred-substrate InP/InGaAs Single Heterojunction Bipolar Transistors (SHBT) are reported. Here, the first RF results showing fT=70 GHz and fmax=110 GHz for a device with 2times10 mum2 emitter and 3times12.5 mum2 collector, are presented. Emphasis is given on the fabrication of the devices with rather simple methods without involving specialized or complicated equipment
  • Keywords
    III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; 110 GHz; 70 GHz; HBT; InP-InGaAs; InP-InGaAs single heterojunction bipolar transistors; RF results; Bonding; Capacitance; Epitaxial layers; Etching; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Protection; Radio frequency; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517544
  • Filename
    1517544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2175139