Title :
Fabrication of transferred-substrate HBT with simple technology
Author :
Topaloglu, S. ; Driesen, J. ; Poloczek, A. ; Tegude, F.J.
Author_Institution :
Dept. of Solid State Electron., Univ. Duisburg-Essen, Duisburg
Abstract :
In this paper, transferred-substrate InP/InGaAs Single Heterojunction Bipolar Transistors (SHBT) are reported. Here, the first RF results showing fT=70 GHz and fmax=110 GHz for a device with 2times10 mum2 emitter and 3times12.5 mum2 collector, are presented. Emphasis is given on the fabrication of the devices with rather simple methods without involving specialized or complicated equipment
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; 110 GHz; 70 GHz; HBT; InP-InGaAs; InP-InGaAs single heterojunction bipolar transistors; RF results; Bonding; Capacitance; Epitaxial layers; Etching; Fabrication; Heterojunction bipolar transistors; Indium phosphide; Protection; Radio frequency; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517544
