Title :
Porous silicon, preparation and characterization for optoelectronics applications
Author :
Kleps, Irina ; Angelescu, Anca ; Garcia, Nicolas ; Serena, Pedro ; Gil, Adriana
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
Porous silicon preparation, morphology and chemical composition are evaluated in connection with the possibility of using this material for optoelectronic devices. The electroluminescence properties were determined by liquid contact during anodic oxidation of PS
Keywords :
electroluminescence; elemental semiconductors; materials preparation; oxidation; porous materials; scanning electron microscopy; secondary ion mass spectra; silicon; surface structure; anodic oxidation; chemical composition; electroluminescence; morphology; optoelectronic devices; porous silicon; preparation; Atomic layer deposition; Chemicals; Composite materials; Gas insulated transmission lines; Nanoscale devices; Optoelectronic devices; Oxidation; Silicon; Surface morphology; Surface topography;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651715
