DocumentCode
2175170
Title
Technology development for photonic integration in InP
Author
Yanson, D.A. ; Silver, M. ; Masterton, G. ; Vassalli, O. ; Campbell, M. ; McDougall, S.D. ; Marsh, J.H.
Author_Institution
Intense Ltd., Glasgow
fYear
2005
fDate
8-12 May 2005
Firstpage
512
Lastpage
515
Abstract
We report our development activities towards high-density photonic integrated circuits. Two key technologies, quantum well intermixing and etched turning mirrors, are demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 microns
Keywords
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; integrated optics; mirrors; optical materials; semiconductor quantum wells; 1.55 micron; InGaAs-InAlGaAs; InP; etched turning mirrors; high-density photonic integrated circuits; photonic integration; quantum well intermixing; Indium phosphide; Integrated circuit technology; Mirrors; Optical reflection; Optical waveguides; Photonic band gap; Photonic integrated circuits; Propagation losses; Quantum wells; Turning;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517545
Filename
1517545
Link To Document