Title :
Technology development for photonic integration in InP
Author :
Yanson, D.A. ; Silver, M. ; Masterton, G. ; Vassalli, O. ; Campbell, M. ; McDougall, S.D. ; Marsh, J.H.
Author_Institution :
Intense Ltd., Glasgow
Abstract :
We report our development activities towards high-density photonic integrated circuits. Two key technologies, quantum well intermixing and etched turning mirrors, are demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 microns
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; integrated optics; mirrors; optical materials; semiconductor quantum wells; 1.55 micron; InGaAs-InAlGaAs; InP; etched turning mirrors; high-density photonic integrated circuits; photonic integration; quantum well intermixing; Indium phosphide; Integrated circuit technology; Mirrors; Optical reflection; Optical waveguides; Photonic band gap; Photonic integrated circuits; Propagation losses; Quantum wells; Turning;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517545
