DocumentCode :
2175171
Title :
Segmented FGM for linearization of the characteristics of β-FeSi2 based thermal sensors
Author :
Drasar, C. ; Ernst, H. ; Kaibe, H.T. ; Rauscher, L. ; Müller, E. ; Kaysser, W.A.
Author_Institution :
German Aerosp. Center, Inst. of Mater. Res., Koln, Germany
fYear :
2001
fDate :
2001
Firstpage :
298
Lastpage :
302
Abstract :
Highly sensitive thermal sensors can be developed when replacing metallic alloys in high temperature thermoelectric (TE) detectors by semiconducting materials. Functionally graded materials (FGM) can be used to tune the temperature characteristics of the signal responsivity, which should be independent from temperature. A technique of preparing segmented TE FGM of FeSi2 doped with Al, FeSi2 doped with Mn, or FeSi2 double doped with Mn and Al is demonstrated. A correlated variation of the TE properties caused by change of the doping is found. The doping content of the material was varied mainly to control the temperature dependence of the Seebeck coefficient S. For highly responsive heat flux sensors, high S and low K are desired. Al+Mn double doping was employed to achieve proper S values. The linearization of sensor characteristics needs in the easiest approach a temperature independent S. This aim was met using a stack of segments with different temperature curves of the Seebeck coefficient. Constant integral thermopower between -50°C and +500°C with a comparably high value of about 270 μV/K was numerically predicted for the stack with a dispersion below 5%. Accordingly, a segmented thermocouple has been prepared after the modeling results and has been characterized
Keywords :
Seebeck effect; aluminium; functionally graded materials; iron compounds; manganese; semiconductor materials; thermocouples; thermoelectric power; β-FeSi2 based thermal sensors; -50 to 500 degC; Al Mn double doping; FeSi2:Al; FeSi2:Al,Mn; FeSi2:Mn; Seebeck coefficient temperature curves; Seebeck coefficient temperature dependence; doping effects; functionally graded materials; heat flux sensors; high temperature thermoelectric detectors; segmented FGM; segmented thermocouple; semiconducting materials; sensor characteristic linearization; signal responsivity; thermopower; Detectors; Doping; Inorganic materials; Semiconductivity; Semiconductor materials; Sensor phenomena and characterization; Tellurium; Temperature sensors; Thermal sensors; Thermoelectricity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
ISSN :
1094-2734
Print_ISBN :
0-7803-7205-0
Type :
conf
DOI :
10.1109/ICT.2001.979891
Filename :
979891
Link To Document :
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