Liquid phase oxidation on InGaP and its application to InGaP/GaAs HBTs surface passivation

Author

Lee, Kuan-Wei ; Yang, Nan-Ying ; Lee, Kai-Lin ; Sze, Po-Wen ; Houng, Mau-Phon ; Wang, Yeong-Her

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan

fYear

2005

fDate

8-12 May 2005

Firstpage

516

Lastpage

519

Abstract

A liquid phase oxidation to grow native oxide film on InGaP near room temperature is investigated and characterized. The application as the surface passivation to improve the InGaP/GaAs heterojunction bipolar transistors (HBTs) performance is also demonstrated. In this work, the HBT devices with surface passivation by the native oxide exhibit 700% improvement in current gain at low collector current regimes by the reduction of surface recombination current, as compared to those without surface passivation. In addition, a larger breakdown voltage (23.5 V) and a lower base recombination current (10^-12 A) are also obtained

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; oxidation; passivation; InGaP-GaAs; InGaP-GaAs HBT; breakdown voltage; collector current regimes; current gain; heterojunction bipolar transistors; liquid phase oxidation; native oxide film; surface passivation; surface recombination current; Chemicals; Etching; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; MODFETs; Microelectronics; Oxidation; Passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517546

Filename

1517546