DocumentCode :
2175221
Title :
Influence of Si/sub 3/N/sub 4/ passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures
Author :
Liu, Yuwei ; Wang, Hong
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
520
Lastpage :
522
Abstract :
The influence of silicon nitride passivation on electron mobility of InGaAs/InP composite channel high electron mobility transistor structures has been studied. An increase in effective mobility mue with a negligible change of sheet carrier density ns after SiN deposition is clearly observed. Our results suggest that the enhancement of mue could be explained under the framework of electrons transfer from the InP sub-channel into InGaAs channel region due to the energy band bending at surface region caused by SiN passivation
Keywords :
band structure; carrier density; gallium arsenide; high electron mobility transistors; indium compounds; passivation; silicon compounds; InGaAs-InP; InGaAs-InP composite channel high electron mobility transistor structures; Si3N4; Si3N4 passivation; electron transfer; energy band bending; sheet carrier density; silicon nitride passivation; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Passivation; Plasma measurements; Plasma temperature; Silicon compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517547
Filename :
1517547
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2175221
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