DocumentCode :
2175229
Title :
Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications
Author :
Elgaid, K. ; McLelland, H. ; Stanley, C.R. ; Thayne, I.G.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ.
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
523
Lastpage :
525
Abstract :
We report on W-band LNA (MMMICs) based around a 50nm InP-HEMTs with an fT of 0.550 THz. The LNA noise figure is 2.5 dB and associated gain of 7.3 dB at 90 GHz with a bandwidth of 24 GHz
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; millimetre wave amplifiers; millimetre wave receivers; 0.550 THz; 24 GHz; 7.3 dB; 90 GHz; InP; InP-HEMT; LNA noise figure; low noise W-band MMMIC amplifier; millimeterwave receivers applications; Coplanar waveguides; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; Noise figure; Probes; Process design; Radio frequency; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517548
Filename :
1517548
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2175229
بازگشت