DocumentCode :
2175254
Title :
A Film Bulk Acoustic Resonator (FBAR) L Band Low Noise Oscillator for Digital Communications
Author :
Khanna, A.P.S. ; Gane, Ed ; Chong, Thomas ; Ko, Herb ; Bradley, Paul ; Ruby, Richard ; Larson, John D., III
Author_Institution :
Wireless Semiconductor Division, Agilent Technologies, Inc., 3175 Bowers Avenue, Santa Clara, CA. 95054
fYear :
2002
fDate :
23-26 Sept. 2002
Firstpage :
1
Lastpage :
3
Abstract :
This paper describes the design and measured performance of a low-noise L band oscillator based on Agilent´s Film Bulk Acoustic Resonator (FBAR) for applications in digital communication systems. This experimental oscillator demonstrated at 1951 MHz with a phase noise of - 115 dBc/Hz at 10KHz from the carrier represents the first example of a low noise Si-Bipolar FBAR oscillator.
Keywords :
Acoustic noise; Ceramics; Digital communication; Film bulk acoustic resonators; Oscillators; Phase noise; Planar transmission lines; Resonant frequency; Semiconductor device noise; Surface acoustic waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
Type :
conf
DOI :
10.1109/EUMA.2002.339463
Filename :
4140543
Link To Document :
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