DocumentCode :
2175259
Title :
Low threshold current 1540 nm wavelength GaInAsP/InP quantum-wire distributed-feedback lasers
Author :
Yagi, Hideki ; Miura, Koji ; Plumwongrot, Dhanorm ; Nishimoto, Yoshifumi ; Ohira, Kazuya ; Maruyama, Takeo ; Arai, Shigehisa
Author_Institution :
Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol.
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
526
Lastpage :
529
Abstract :
1540 nm wavelength GaInAsP/InP quantum-wire (24 nm wide) distributed feedback lasers were realized by dry etching and regrowth method. A threshold current as low as 2.7 mA, a differential quantum efficiency of 19 %/facet and an SMSR of 51 dB (@ 2Ith) were attained under RT-CW condition for the stripe width of 3.0 mum and the cavity length of 330 mum
Keywords :
III-V semiconductors; distributed feedback lasers; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor quantum wires; 1540 nm; 293 to 298 K; GaInAsP-InP; cavity length; differential quantum efficiency; dry etching; quantum-wire distributed-feedback lasers; regrowth method; stripe width; threshold current; Distributed feedback devices; Dry etching; Indium phosphide; Laser feedback; Laser theory; Lithography; Optical device fabrication; Semiconductor lasers; Threshold current; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517549
Filename :
1517549
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2175259
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