Low threshold current 1540 nm wavelength GaInAsP/InP quantum-wire distributed-feedback lasers

Author

Yagi, Hideki ; Miura, Koji ; Plumwongrot, Dhanorm ; Nishimoto, Yoshifumi ; Ohira, Kazuya ; Maruyama, Takeo ; Arai, Shigehisa

Author_Institution

Quantum Nanoelectron. Res. Center, Tokyo Inst. of Technol.

fYear

2005

fDate

8-12 May 2005

Firstpage

526

Lastpage

529

Abstract

1540 nm wavelength GaInAsP/InP quantum-wire (24 nm wide) distributed feedback lasers were realized by dry etching and regrowth method. A threshold current as low as 2.7 mA, a differential quantum efficiency of 19 %/facet and an SMSR of 51 dB (@ 2I_th) were attained under RT-CW condition for the stripe width of 3.0 mum and the cavity length of 330 mum

Keywords

III-V semiconductors; distributed feedback lasers; etching; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; semiconductor quantum wires; 1540 nm; 293 to 298 K; GaInAsP-InP; cavity length; differential quantum efficiency; dry etching; quantum-wire distributed-feedback lasers; regrowth method; stripe width; threshold current; Distributed feedback devices; Dry etching; Indium phosphide; Laser feedback; Laser theory; Lithography; Optical device fabrication; Semiconductor lasers; Threshold current; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517549

Filename

1517549