DocumentCode
2175336
Title
Enhanced photoluminescence intensity in modulation doped p-InAs quantum dots grown by molecular beam epitaxy
Author
Kumagai, Naoto ; Watanabe, Katsuyuki ; Tsukamoto, Shiro ; Arakawa, Yasuhiko
Author_Institution
Nanoelectron. Collaborative Res. Center, Tokyo Univ.
fYear
2005
fDate
8-12 May 2005
Firstpage
537
Lastpage
539
Abstract
The photoluminescence (PL) intensity of InAs quantum dots (QDs), of which wavelength is 1.3 mum at room temperature, has been significantly enhanced by introducing p-type modulation doping and optimizing of the spacer thickness
Keywords
III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor quantum dots; 1.3 micron; 293 to 298 K; InAs; doped p-InAs quantum dots; molecular beam epitaxy; p-type modulation doping; photoluminescence intensity; Doping; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Quantum dot lasers; Quantum dots; Temperature; Thickness measurement; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517552
Filename
1517552
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