Title :
Enhanced photoluminescence intensity in modulation doped p-InAs quantum dots grown by molecular beam epitaxy
Author :
Kumagai, Naoto ; Watanabe, Katsuyuki ; Tsukamoto, Shiro ; Arakawa, Yasuhiko
Author_Institution :
Nanoelectron. Collaborative Res. Center, Tokyo Univ.
Abstract :
The photoluminescence (PL) intensity of InAs quantum dots (QDs), of which wavelength is 1.3 mum at room temperature, has been significantly enhanced by introducing p-type modulation doping and optimizing of the spacer thickness
Keywords :
III-V semiconductors; indium compounds; molecular beam epitaxial growth; photoluminescence; semiconductor doping; semiconductor quantum dots; 1.3 micron; 293 to 298 K; InAs; doped p-InAs quantum dots; molecular beam epitaxy; p-type modulation doping; photoluminescence intensity; Doping; Epitaxial layers; Gallium arsenide; Molecular beam epitaxial growth; Photoluminescence; Quantum dot lasers; Quantum dots; Temperature; Thickness measurement; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517552
