Growth-temperature-dependent bandgap of MBE-grown GaInNAs epilayers lattice matched to GaAs

Author

Pavelescu, E.-M. ; Wagner, Jens ; Kudrawiec R ; Dumitrescu, M. ; Konttinen, J. ; Dhaka, V.D.S. ; Lemmetyinen, H. ; Pessa, M.

Author_Institution

Optoelectron. Res. Centre, Tampere Univ. of Technol.

fYear

2005

fDate

8-12 May 2005

Firstpage

540

Lastpage

542

Abstract

We have observed that the bandgap of lattice-matched GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, noticeably increases as growth temperature increases within the 410-470degC range. The increase in the band gap with increasing growth temperature has been found to be due to a decrease in the substitutional nitrogen content as well as to an enhancement in the amount of N-Ga₃In clusters relative to the N-Ga₄ ones

Keywords

III-V semiconductors; energy gap; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 410 to 470 C; GaAs; GaInNAs-GaAs; N-Ga₃In clusters; growth-temperature-dependent bandgap; lattice-matched GaInNAs-GaAs epilayers; molecular beam epitaxy; Chemical technology; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Photovoltaic cells; Physics; Substrates; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517553

Filename

1517553