Title :
Growth-temperature-dependent bandgap of MBE-grown GaInNAs epilayers lattice matched to GaAs
Author :
Pavelescu, E.-M. ; Wagner, Jens ; Kudrawiec R ; Dumitrescu, M. ; Konttinen, J. ; Dhaka, V.D.S. ; Lemmetyinen, H. ; Pessa, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol.
Abstract :
We have observed that the bandgap of lattice-matched GaInNAs-on-GaAs epilayers, grown by molecular beam epitaxy under constant fluxes, noticeably increases as growth temperature increases within the 410-470degC range. The increase in the band gap with increasing growth temperature has been found to be due to a decrease in the substitutional nitrogen content as well as to an enhancement in the amount of N-Ga3In clusters relative to the N-Ga4 ones
Keywords :
III-V semiconductors; energy gap; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; 410 to 470 C; GaAs; GaInNAs-GaAs; N-Ga3In clusters; growth-temperature-dependent bandgap; lattice-matched GaInNAs-GaAs epilayers; molecular beam epitaxy; Chemical technology; Gallium arsenide; Lattices; Molecular beam epitaxial growth; Nitrogen; Photonic band gap; Photovoltaic cells; Physics; Substrates; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517553
