Title :
Realization of 20 GHz directly modulated 1.55 /spl mu/m DFB lasers using partially strain compensated quantum wells structures
Author :
Parillaud, O. ; van Dijk, F. ; Vodjdani, N.
Author_Institution :
Thales Ill-V Lab, Alcatel, Orsay
Abstract :
We have realized and compared fully strained and partially strain compensated GaInAsP/InP based QW structures for the fabrication of directly modulated 1.55 mum DFB lasers. Active region containing up to 10 quantum wells were achieved and characterized using High Resolution X-Ray Diffraction (HR-XRD) and photoluminescence mapping at room temperature. DFB lasers containing 6, 8 and 10 QWs were fabricated. Bandwidth up to 20 GHz was obtained at 150 mA operation
Keywords :
III-V semiconductors; X-ray diffraction; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; optical fabrication; optical modulation; optical transmitters; photoluminescence; quantum well lasers; semiconductor quantum wells; 1.55 micron; 150 mA; 20 GHz; 293 to 298 K; DFB lasers; GaInAsP-InP; active region; fully strain compensated quantum wells structures; high resolution X-ray diffraction; laser direct modulation; laser fabrication; partially strain compensated quantum well structures; photoluminescence; Bandwidth; Capacitive sensors; Holography; Indium phosphide; Laser radar; Optical materials; Photoluminescence; Quantum well lasers; Temperature; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517556
