Title :
40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells
Author :
Gerlach, Philipp ; Peschke, Martin ; Saravanan, Brem Kumar ; Knoedl, Thomas ; Hanke, Christian ; Stegmueller, Bemhard ; Michalzik, Rainer
Author_Institution :
Optoelectron. Dept., Ulm Univ.
Abstract :
We demonstrate 40 Gbit/s operation of an InP-based 1.3 mum laser-integrated electroabsorption modulator using an identical InGaAlAs quantum well stack in both device sections. Characteristic data are 22 mA threshold current and 35 dB side-mode suppression ratio
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; laser beams; optical communication equipment; semiconductor lasers; semiconductor quantum wells; 1.3 micron; 22 mA; 40 Gbit/s; DFB laser; InGaAlAs; InGaAlAs quantum well stack; InP; laser-integrated electroabsorption modulator; side-mode suppression ratio; threshold current; Absorption; Chirp modulation; Etching; Gain measurement; Optical coupling; Optical modulation; Quantum well lasers; Semiconductor device measurement; Threshold current; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517557
