40 Gbit/s operation of laser-integrated electroabsorption modulator using identical InGaAlAs quantum wells

Author

Gerlach, Philipp ; Peschke, Martin ; Saravanan, Brem Kumar ; Knoedl, Thomas ; Hanke, Christian ; Stegmueller, Bemhard ; Michalzik, Rainer

Author_Institution

Optoelectron. Dept., Ulm Univ.

fYear

2005

fDate

8-12 May 2005

Firstpage

554

Lastpage

557

Abstract

We demonstrate 40 Gbit/s operation of an InP-based 1.3 mum laser-integrated electroabsorption modulator using an identical InGaAlAs quantum well stack in both device sections. Characteristic data are 22 mA threshold current and 35 dB side-mode suppression ratio

Keywords

III-V semiconductors; aluminium compounds; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; laser beams; optical communication equipment; semiconductor lasers; semiconductor quantum wells; 1.3 micron; 22 mA; 40 Gbit/s; DFB laser; InGaAlAs; InGaAlAs quantum well stack; InP; laser-integrated electroabsorption modulator; side-mode suppression ratio; threshold current; Absorption; Chirp modulation; Etching; Gain measurement; Optical coupling; Optical modulation; Quantum well lasers; Semiconductor device measurement; Threshold current; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

Conference_Location

Glasgow, Scotland

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517557

Filename

1517557