Title :
Magnetoresistance and thermopower of ultrafine bismuth nanowire arrays
Author :
Huber, T.E. ; Constant, P.
Author_Institution :
Laser Lab., Howard Univ., Washington, DC
Abstract :
We report electronic transport measurements of arrays of bismuth nanowires with diameters of 30 and 200 nm over a wide range of temperatures (2.0 to 300 K) and magnetic fields (-9 to 9 T). An arrangement of separate contacts for voltage and current is used. The magnetic field causes a Hall voltage to appear together with the magnetoresistance. Hall voltage can be separated from the magnetoresistance using D C techniques and magnetic field reversal. The main result is a sharp peak of the longitudinal (B//I) magnetoresistance for B=O
Keywords :
Hall effect; bismuth; magnetoresistance; nanostructured materials; quantum wires; semimetallic thin films; thermoelectric power; -9 to 9 T; 2.0 to 300 K; 200 nm; 30 nm; Bi; Hall voltage; electronic transport measurements; magnetic field reversal; magnetoresistance; separate contacts; thermopower; ultrafine Bi nanowire arrays; Bismuth; Contacts; Magnetic field measurement; Magnetoresistance; Nanostructures; Thermoelectricity; Tin alloys; Voltage; Wire; X-ray imaging;
Conference_Titel :
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-7205-0
DOI :
10.1109/ICT.2001.979905
