DocumentCode
2175549
Title
Magnetoresistance and thermopower of ultrafine bismuth nanowire arrays
Author
Huber, T.E. ; Constant, P.
Author_Institution
Laser Lab., Howard Univ., Washington, DC
fYear
2001
fDate
2001
Firstpage
356
Lastpage
360
Abstract
We report electronic transport measurements of arrays of bismuth nanowires with diameters of 30 and 200 nm over a wide range of temperatures (2.0 to 300 K) and magnetic fields (-9 to 9 T). An arrangement of separate contacts for voltage and current is used. The magnetic field causes a Hall voltage to appear together with the magnetoresistance. Hall voltage can be separated from the magnetoresistance using D C techniques and magnetic field reversal. The main result is a sharp peak of the longitudinal (B//I) magnetoresistance for B=O
Keywords
Hall effect; bismuth; magnetoresistance; nanostructured materials; quantum wires; semimetallic thin films; thermoelectric power; -9 to 9 T; 2.0 to 300 K; 200 nm; 30 nm; Bi; Hall voltage; electronic transport measurements; magnetic field reversal; magnetoresistance; separate contacts; thermopower; ultrafine Bi nanowire arrays; Bismuth; Contacts; Magnetic field measurement; Magnetoresistance; Nanostructures; Thermoelectricity; Tin alloys; Voltage; Wire; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location
Beijing
ISSN
1094-2734
Print_ISBN
0-7803-7205-0
Type
conf
DOI
10.1109/ICT.2001.979905
Filename
979905
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