Jitter and dynamics in passively mode-locked quantum dot semiconductor laser

Our theoretical analysis is based on time-delayed equations describing the properties of two section quantum dot semiconductor lasers (Viktorov et al., 2006) under the influence of noise. The ML regime is described by two recovery stages with different timescales that can be related to carrier capture and relaxation mechanisms within a dot. Here the numerical study shows that the timing jitter is strongly affected by the presence of bistability. In particular, contrary to the usual behavior, our analysis shows that, near the lasing threshold, the timing jitter increases with increasing injection current.