Fabrication of thermoelectric materials with bismuth nanowire array

Author

Wang, Wei ; Zhang, Weiling ; Si, Liping ; Zhang, Jianzhong ; Gao, Jianping

Author_Institution

Dept. of Appl. Chem., Tianjin Univ., China

fYear

2001

fDate

2001

Firstpage

367

Lastpage

370

Abstract

It has been theoretically verified that the thermoelectric performance can be improved greatly when normal thermoelectric materials possess low dimensional structure. In our lab., Doped N-type and P-type Bi nanowire array thermoelectric materials have been fabricated by electrodeposition technology. The porous alumina films with nano-pore array structure were used as template, and one-dimensional thermoelectric materials dispersed in alumina matrix have been obtained, and their composition and structure have been analyzed

Keywords

alumina; arrays; bismuth; crystal structure; electrodeposition; elemental semiconductors; nanostructured materials; nanotechnology; porous materials; semiconductor growth; semiconductor quantum wires; stoichiometry; thermoelectricity; Al₂O₃-Bi; alumina matrix; bismuth nanowire array; composition; doped n-type Bi nanowire; electrodeposition; low dimensional structure; nano-pore array structure; one-dimensional thermoelectric materials; p-type Bi nanowire; porous alumina films; structure; template; thermoelectric materials; Bismuth; Building materials; Electrodes; Fabrication; Mesoporous materials; Nanoporous materials; Nanostructured materials; Quantum dots; System testing; Thermoelectricity;

fLanguage

English

Publisher

ieee

Conference_Titel

Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on

Conference_Location

Beijing

ISSN

1094-2734

Print_ISBN

0-7803-7205-0

Type

conf

DOI

10.1109/ICT.2001.979908

Filename

979908