DocumentCode
2175688
Title
Application of new theory of thermoelectric effects on CdTe
Author
Vackova, S. ; Zdansky, K. ; Chren, D. ; Horazdovsky, T. ; Gorodinskij, V. ; Majlingova, O. ; Vacek, K.
Author_Institution
Dept. of Phys., Czech Tech. Univ., Prague, Czech Republic
fYear
2001
fDate
2001
Firstpage
375
Lastpage
377
Abstract
The fast rise of Seebeck coefficient in CdTe with decreasing temperature found experimentally, has not been successfully explained theoretically for many years. It is shown that this effect can be realistically explained by a new theory (Yu. Gurevich et al, Phys. Rev., in press) which includes processes on the metal semiconductor interface. Also the influence of temperature gradient on the sensitivity of gamma detectors in CdTe is discussed
Keywords
II-VI semiconductors; Seebeck effect; cadmium compounds; gamma-ray detection; semiconductor counters; semiconductor-metal boundaries; CdTe; Seebeck coefficient; gamma detectors; metal semiconductor interface; sensitivity; temperature gradient; thermoelectric effects; Charge carrier processes; Copper; Electric resistance; Electrons; Ohmic contacts; Radiative recombination; Spontaneous emission; Temperature measurement; Temperature sensors; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2001. Proceedings ICT 2001. XX International Conference on
Conference_Location
Beijing
ISSN
1094-2734
Print_ISBN
0-7803-7205-0
Type
conf
DOI
10.1109/ICT.2001.979910
Filename
979910
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