DocumentCode
2175695
Title
100-GHz optoelectronic integrated circuits using InP HBTs and a UTC-PD
Author
Kashio, Norihide ; Kurishima, Kenji ; Sano, Kimikazu ; Ida, Minoru ; Watanabe, Noriyuki ; Fukuyama, Hiroyuki ; Sugahara, Hirohiko ; Enoki, Takatomo
Author_Institution
NTT Photonics Lab., NTT Corp., Kanagawa
fYear
2005
fDate
8-12 May 2005
Firstpage
590
Lastpage
593
Abstract
Optoelectronic integrated circuits (OEICs) using InP double-heterojunction bipolar transistors (InP DHBTs) and a uni-traveling-carrier photodiode (UTC-PD) have been fabricated by a non-selective regrowth technique. We have successfully demonstrated 100-GHz operation of an optical-clock frequency-divider OEIC
Keywords
III-V semiconductors; frequency dividers; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; photodiodes; 100 GHz; InP; InP HBT; UTC-PD; double-heterojunction bipolar transistors; nonselective regrowth technique; optical-clock frequency-divider; optoelectronic integrated circuit; unitraveling-carrier photodiode; Heterojunction bipolar transistors; High speed optical techniques; Indium phosphide; Optical devices; Optical distortion; Optical interconnections; Optical receivers; Optical saturation; Photoconductivity; Photonic integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517566
Filename
1517566
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