Title :
Production InP MMICs for low cost, high performance applications
Author :
Lai, R. ; Grundbacher, R. ; Sawdai, D. ; Uyeda, J. ; Biedenbender, M. ; Barsky, M. ; Gutierrez-Aitken, A. ; Cavus, A. ; Chin, P. ; Liu, P.H. ; Bhorania, R. ; Streit, D. ; Oki, A.
Author_Institution :
Northrop Grumman Space Technol., Redono Beach, CA
Abstract :
We report the progress of production InP MMICs for low cost, high performance applications at Northrop Grumman Space Technology (NGST). Both InP HEMT and HBT technologies are being developed on 100 mm diameter InP substrates and this development is leading to lower costs that will rival both GaAs-based MMICs including GaAs-based metamorphic technologies with superior performance. Two specific InP niche product areas will be discussed-high linearity InP HBT power amplifiers and high frequency W-band low noise amplifiers
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; heterojunction bipolar transistors; indium compounds; GaAs-based MMICs; GaAs-based metamorphic technologies; InP; InP HBT power amplifiers; InP HEMT technology; InP substrates; high frequency W-band low noise amplifiers; production InP MMICs; Costs; HEMTs; Heterojunction bipolar transistors; High power amplifiers; Indium phosphide; Linearity; Low-noise amplifiers; MMICs; Production; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517568
