DocumentCode
2175869
Title
A 150-215 GHz InP HEMT low noise amplifier with 12 dB gain
Author
Grundbacher, R. ; Raja, R. ; Lai, R. ; Chou, Y.C. ; Nishimoto, M. ; Gaier, T. ; Dawson, D. ; Liu, P.W. ; Barsky, M. ; Oki, A.
Author_Institution
Northrop Grumman Space Technol., Redono Beach, CA
fYear
2005
fDate
8-12 May 2005
Firstpage
613
Lastpage
616
Abstract
We present a 150-215 GHz InP HEMT MMIC with greater than 12dB gain across this band. The MMIC is a 3-stage, single-ended microstrip design implemented using 0.07 mum T-gate InP HEMT MMIC technology with 50 mum substrate
Keywords
III-V semiconductors; MMIC; high electron mobility transistors; indium compounds; microstrip circuits; 12 dB; 150 to 215 GHz; InP; T-gate InP HEMT MMIC technology; low noise amplifier; single-ended microstrip design; Fabrication; Gain; HEMTs; Indium phosphide; Low-noise amplifiers; MMICs; Microstrip; Molecular beam epitaxial growth; Space technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517571
Filename
1517571
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