DocumentCode
2175884
Title
Design of ultra wide band transition connector for GTEM cell
Author
Junru, Zhang ; Wensi, Zhu ; Mengxia, Yu ; Yuanyuan, Wang
Author_Institution
Inst. of Appl. Phys., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear
2011
fDate
9-11 Sept. 2011
Firstpage
3657
Lastpage
3660
Abstract
The transition connector plays a vital role in the study of Gigahertz Transverse Electro Magnetic cell (GTEM Cell). An ultra wide band transition connector is proposed based on the principle of impedance matching between the transition connector and the GTEM Cell. The dual energy methods and 3D quasi-static are respectively employed to calculate the characteristic impedance of the transition connector and the main section of the GTEM Cell. The transition connector has the advantages of simple structure and low insertion loss. A GTEM Cell is presented with the transition in this paper. The simulated results of the CST software show that its upper limiting frequency is 25GHz, and indicate that the VSWR of the GTEM Cell is less than 1.62 and S11 is less than -12dB during the frequency band 0.5~25GHz.
Keywords
TEM cells; impedance matching; ultra wideband communication; 3D quasistatic; CST software; GTEM cell; VSWR; dual energy methods; gigahertz transverse electro magnetic cell; impedance matching; insertion loss; ultrawide band transition connector; Capacitance; Conductors; Connectors; Impedance; Impedance matching; Power transmission lines; TEM cells; GTEM Cell; VSWR; impedance matching; return loss S11; transition connector;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location
Ningbo
Print_ISBN
978-1-4577-0320-1
Type
conf
DOI
10.1109/ICECC.2011.6066569
Filename
6066569
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