Title :
A low power AlSb/InAs HEMT X-band low noise amplifier
Author :
Buhrow, B.R. ; Sokolov, V. ; Riemer, P.J. ; Harff, N.E. ; Tsai, R. ; Gutierrez-Aitken, A. ; Gilbert, B.K. ; Daniel, E.S.
Author_Institution :
Mayo Found., Rochester, MN
Abstract :
We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented
Keywords :
III-V semiconductors; aluminium compounds; antimony compounds; arsenic compounds; high electron mobility transistors; indium compounds; phase noise; power amplifiers; AlSb-InAs; HEMT integrated circuit technology; X-band low noise amplifier characterization; gain; phase noise characterization; power semiconductor HEMT; Circuit noise; HEMTs; Impedance matching; Low-noise amplifiers; MMICs; Noise figure; Phase noise; Probes; Semiconductor device noise; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517572
