DocumentCode
2175901
Title
A low power AlSb/InAs HEMT X-band low noise amplifier
Author
Buhrow, B.R. ; Sokolov, V. ; Riemer, P.J. ; Harff, N.E. ; Tsai, R. ; Gutierrez-Aitken, A. ; Gilbert, B.K. ; Daniel, E.S.
Author_Institution
Mayo Found., Rochester, MN
fYear
2005
fDate
8-12 May 2005
Firstpage
617
Lastpage
620
Abstract
We present design and characterization of a low power single stage X-band low noise amplifier in an AlSb/InAs HEMT integrated circuit technology. Gain, noise, linearity, and phase noise characterization are presented
Keywords
III-V semiconductors; aluminium compounds; antimony compounds; arsenic compounds; high electron mobility transistors; indium compounds; phase noise; power amplifiers; AlSb-InAs; HEMT integrated circuit technology; X-band low noise amplifier characterization; gain; phase noise characterization; power semiconductor HEMT; Circuit noise; HEMTs; Impedance matching; Low-noise amplifiers; MMICs; Noise figure; Phase noise; Probes; Semiconductor device noise; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517572
Filename
1517572
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