Title :
S-band wideband gain lasers with 32 channel coverage and launching power 2dBm for WDM-PON
Author :
Lee, E.H. ; Keh, Y.C. ; Kang, J.K. ; Bang, Y.C. ; Kim, Y.H. ; Hwang, S.L. ; Shin, D.J. ; Park, S.S. ; Lee, J.S. ; Lee, J.K. ; Oh, Y.K. ; Jang, D.H.
Author_Institution :
Telecommun. R&D Center, Samsung Electron. Co., Suwon
Abstract :
Uncooled ASE-injected WBG-LDs in the S-band are first developed as downstream sources in WDM-PONs. The single WBG-LD covers 100 GHz-spaced 32 channels and allows BERs of 10-10 with +2 dBm launching power over 25 km
Keywords :
channel spacing; optical fibre networks; semiconductor lasers; superradiance; telecommunication channels; wavelength division multiplexing; 100 GHz; BERs; S-band wideband gain-laser diodes; channel coverage; downstream sources; launching power; uncooled amplified spontaneous emission-injection; wavelength division multiplexed-passive optical network; Arrayed waveguide gratings; Distributed feedback devices; Laser transitions; Laser tuning; Light sources; Power lasers; Quantum well lasers; Semiconductor lasers; Temperature distribution; Wideband;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517573
