Title :
Partitioned-charge-based modeling: a new approach
Author :
McDonald, Robert J.
Author_Institution :
Dept. of Electr. & Comput. Eng, Clemson Univ., SC, USA
Abstract :
By taking moments of the hole (electron) continuity equation, a novel derivation of the partitioned-charge-based (PCB) bipolar junction transistor (BJT) model is presented. The derivation allows for an arbitrary partitioning of the excess charge in the quasi-neutral base (QNB) and thus generalizes the PCB methodology. With this novel approach, an optimal nonquasi-static (NQS) BJT equivalent network representation, within the PCB framework, can be obtained
Keywords :
bipolar transistors; semiconductor device models; bipolar junction transistor; equivalent network; hole continuity; partitioned charge based modelling; quasi-neutral base; Charge carrier density; Charge carrier processes; Circuit simulation; Current density; Differential equations; Discrete event simulation; Electrons; Frequency domain analysis; Laplace equations; Modems;
Conference_Titel :
System Theory, 1989. Proceedings., Twenty-First Southeastern Symposium on
Conference_Location :
Tallahassee, FL
Print_ISBN :
0-8186-1933-3
DOI :
10.1109/SSST.1989.72509
