DocumentCode
2175994
Title
Analysis on reverse electrostatic discharge induced degradation of GaInAsP/InP laser diodes
Author
Ichikawa, H. ; Kumagai, A. ; Hamada, K. ; Yamaguchi, A. ; Nakabayashi, T.
Author_Institution
Transmission devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama
fYear
2005
fDate
8-12 May 2005
Firstpage
629
Lastpage
632
Abstract
We clarified the principal mechanism of reverse ESD induced degradation caused by concentration of high electric field inside MQW from theoretical and experimental results. We found that the strength of electric field depends on both thickness of depletion layer and doping concentration of current blocking layer
Keywords
III-V semiconductors; doping profiles; electrostatic discharge; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; GaInAsP-InP; current blocking layer; depletion layer; doping concentration; electric field strength; principal mechanism; reverse electrostatic discharge induced degradation; semiconductor laser diodes; semiconductor multiple quantum wells; Coatings; Degradation; Diode lasers; Electrostatic analysis; Electrostatic discharge; Indium phosphide; Protection; Radiative recombination; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517575
Filename
1517575
Link To Document