Title :
Analysis on reverse electrostatic discharge induced degradation of GaInAsP/InP laser diodes
Author :
Ichikawa, H. ; Kumagai, A. ; Hamada, K. ; Yamaguchi, A. ; Nakabayashi, T.
Author_Institution :
Transmission devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama
Abstract :
We clarified the principal mechanism of reverse ESD induced degradation caused by concentration of high electric field inside MQW from theoretical and experimental results. We found that the strength of electric field depends on both thickness of depletion layer and doping concentration of current blocking layer
Keywords :
III-V semiconductors; doping profiles; electrostatic discharge; gallium arsenide; indium compounds; semiconductor lasers; semiconductor quantum wells; GaInAsP-InP; current blocking layer; depletion layer; doping concentration; electric field strength; principal mechanism; reverse electrostatic discharge induced degradation; semiconductor laser diodes; semiconductor multiple quantum wells; Coatings; Degradation; Diode lasers; Electrostatic analysis; Electrostatic discharge; Indium phosphide; Protection; Radiative recombination; Testing; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517575
