DocumentCode
2176018
Title
Low noise monolithic 40 GHz mode-locked DBR lasers based on GaInAsP/InP
Author
Heidrich, H.
Author_Institution
Fraunhofer-Inst. fur Telecommun., Berlin
fYear
2005
fDate
8-12 May 2005
Firstpage
633
Lastpage
636
Abstract
Very short optical pulses (1.2-2.0 ps) with low amplitude noise (0.8-2.0 %) and low timing jitter (<250 fs) over 5 nm wavelength tuning are reported from a monolithic 40 GHz mode-locked GaInAsP/InP laser
Keywords
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser mode locking; laser noise; timing jitter; 1.2 to 2.0 ps; 40 GHz; GaInAsP-InP; low amplitude noise; low noise monolithic mode-locked DBR laser; low timing jitter; very short optical pulses; wavelength tuning; Distributed Bragg reflectors; Indium phosphide; Laser mode locking; Laser noise; Laser tuning; Noise level; Optical noise; Optical pulses; Optical tuning; Timing jitter;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517576
Filename
1517576
Link To Document