• DocumentCode
    2176061
  • Title

    10Gbit/s InGaAlAs uncooled directly modulated MQW-DFB lasers for SONET and Ethernet applications

  • Author

    Uomi, K. ; Mukaikubo, M. ; Yamamoto, H. ; Nakahara, K. ; Motoda, K. ; Okamoto, K. ; Sakuma, Y. ; Singh, H. ; Washino, R. ; Aoki, M. ; Uchida, K.

  • Author_Institution
    Opnext Japan Inc., Yokohama
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    637
  • Lastpage
    642
  • Abstract
    Key issues concerning the limiting factors of uncooled high-speed lasers are reviewed as well as the demonstration of 10 Gbit/s InGaAlAs uncooled MW-DFB lasers with extremely high fr up to 20 GHz and with high mask margin for SONET and Ethernet applications even at 85 C
  • Keywords
    III-V semiconductors; SONET; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical fibre LAN; quantum well lasers; 10 Gbit/s; 85 C; Ethernet applications; InGaAlAs; SONET; directly modulated MQW-DFB lasers; high mask margin; review; uncooled high-speed lasers; Bandwidth; Ethernet networks; High speed optical techniques; Nonlinear optics; Optical devices; Optical sensors; Optical transmitters; Quantum well devices; SONET; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • Conference_Location
    Glasgow, Scotland
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517577
  • Filename
    1517577