DocumentCode :
2176061
Title :
10Gbit/s InGaAlAs uncooled directly modulated MQW-DFB lasers for SONET and Ethernet applications
Author :
Uomi, K. ; Mukaikubo, M. ; Yamamoto, H. ; Nakahara, K. ; Motoda, K. ; Okamoto, K. ; Sakuma, Y. ; Singh, H. ; Washino, R. ; Aoki, M. ; Uchida, K.
Author_Institution :
Opnext Japan Inc., Yokohama
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
637
Lastpage :
642
Abstract :
Key issues concerning the limiting factors of uncooled high-speed lasers are reviewed as well as the demonstration of 10 Gbit/s InGaAlAs uncooled MW-DFB lasers with extremely high fr up to 20 GHz and with high mask margin for SONET and Ethernet applications even at 85 C
Keywords :
III-V semiconductors; SONET; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical fibre LAN; quantum well lasers; 10 Gbit/s; 85 C; Ethernet applications; InGaAlAs; SONET; directly modulated MQW-DFB lasers; high mask margin; review; uncooled high-speed lasers; Bandwidth; Ethernet networks; High speed optical techniques; Nonlinear optics; Optical devices; Optical sensors; Optical transmitters; Quantum well devices; SONET; Semiconductor lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517577
Filename :
1517577
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2176061
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