Predictive model of SOI buried oxide charging based on statistical mechanics and spin resonance data

In partially depleted NMOS transistors on SOI, back-channel leakage problems are caused by radiation-induced hole trapping at point defect precursors in the buried oxide (BOX). Thus, a predictive model of these hole traps would be quite useful. We show that a model developed recently for hole trapping in poly-capped thermally grown oxides also effectively predicts trapped hole densities in Unibond and SIMOX buried oxides. The model is based on statistical thermodynamics and electron spin resonance (ESR) measurements of defects known as E´ centers