DocumentCode :
2176125
Title :
Semi-insulating InP wafers obtained by Fe-diffusion
Author :
Fornari, R. ; Jimenez, J. ; Avella, M.
Author_Institution :
Inst. for Crystal Growth, Berlin
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
649
Lastpage :
652
Abstract :
As-cut InP wafers with residual carrier concentration <5times1015cm-3, submitted to Fe-diffusion at high temperature, became semi-insulating, with resistivity above 107 Omegacm and mobility in the range 3000-4000 cm2 /Vs. The photoconductivity and photoluminescence mapping showed that the uniformity is improved with respect to typical as-grown Fe-doped InP whilst the overall Fe content is about 1/3 of that typical of SI LEC indium phosphide
Keywords :
III-V semiconductors; carrier density; carrier mobility; diffusion; electrical conductivity; electrical resistivity; indium compounds; iron; photoconductivity; photoluminescence; 107 ohmcm; Fe-diffusion; Fe-doped InP; InP:Fe; SI LEC indium phosphide; carrier mobility; electrical resistivity; photoconductivity; photoluminescence; residual carrier concentration; semiinsulating InP wafers; Annealing; Circuits; Conductivity; Crystalline materials; Indium phosphide; Integrated optoelectronics; Iron; Photoconductivity; Photoluminescence; Temperature distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517579
Filename :
1517579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2176125
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