DocumentCode
2176164
Title
High resistivity in GaInP/GaAs by high temperature Fe ion implantation
Author
Cesca, T. ; Verna, A. ; Gasparotto, A. ; Fraboni, B. ; Impellizzeri, G. ; Priolo, F. ; Tarricone, L. ; Longo, M.
Author_Institution
Phys. Dept., Padova Univ.
fYear
2005
fDate
8-12 May 2005
Firstpage
653
Lastpage
656
Abstract
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GalnP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers
Keywords
III-V semiconductors; annealing; electrical resistivity; gallium compounds; indium compounds; insulating thin films; ion implantation; iron; vapour phase epitaxial growth; Fe ion implantation; GaAs substrates; GaAs-GaInP:Fe; GalnP layers; annealed MOVPE growth; electrical behavior; high electrical resistivity; high temperature effects; semiinsulating layers; structural behavior; Annealing; Conductivity; Epitaxial growth; Epitaxial layers; Gallium arsenide; Ion implantation; Iron; Physics; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517580
Filename
1517580
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