DocumentCode :
2176192
Title :
Observation of an anomalous minority carrier trap in n-type InGaAs
Author :
Gfroerer, T.H. ; Simov, K.R. ; Wanlass, M.W.
Author_Institution :
Davidson Coll., NC
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
657
Lastpage :
659
Abstract :
Temperature-dependent transient capacitance spectroscopy has revealed a deep hole trap in n-type In0.53Ga0.47As. Thermal activation and tunneling across the p+n junction are used to explain the unusual capture and escape mechanisms of this trap
Keywords :
III-V semiconductors; gallium arsenide; hole traps; indium compounds; minority carriers; p-n junctions; In0.53Ga0.47As; capture mechanism; deep hole trap; escape mechanisms; minority carrier trap; n-type semiconductor; temperature-dependent transient capacitance spectroscopy; thermal activation; Capacitance; Delay; Filling; Indium gallium arsenide; Indium phosphide; Spectroscopy; Steady-state; Temperature; Tunneling; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517581
Filename :
1517581
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2176192
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