DocumentCode
2176248
Title
Tunable 1.3 μm lasers with a GaInNAs active region and photonic crystal mirrors
Author
Kamp, M. ; Scherer, H. ; Gollub, D. ; Forchel, A.
Author_Institution
Technische Phys., Wurzburg
fYear
2005
fDate
8-12 May 2005
Firstpage
664
Lastpage
665
Abstract
1.3 μm GaInNAs lasers were integrated with photonic crystal mirrors. The devices use coupled cavities for tunable emission. A tuning range of 20 nm with a sidemode suppression ratio of 30 dB is achieved.
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser mirrors; laser tuning; mirrors; photonic crystals; semiconductor lasers; 1.3 micron; GaInNAs; GaInNAs active region; photonic crystal mirrors; sidemode suppression ratio; tunable emission; tunable lasers; Laser tuning; Mirrors; Optical filters; Optical pumping; Optical resonators; Optical waveguides; Photonic crystals; Quantum well lasers; Tunable circuits and devices; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517583
Filename
1517583
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