Title :
Tunable 1.3 μm lasers with a GaInNAs active region and photonic crystal mirrors
Author :
Kamp, M. ; Scherer, H. ; Gollub, D. ; Forchel, A.
Author_Institution :
Technische Phys., Wurzburg
Abstract :
1.3 μm GaInNAs lasers were integrated with photonic crystal mirrors. The devices use coupled cavities for tunable emission. A tuning range of 20 nm with a sidemode suppression ratio of 30 dB is achieved.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser mirrors; laser tuning; mirrors; photonic crystals; semiconductor lasers; 1.3 micron; GaInNAs; GaInNAs active region; photonic crystal mirrors; sidemode suppression ratio; tunable emission; tunable lasers; Laser tuning; Mirrors; Optical filters; Optical pumping; Optical resonators; Optical waveguides; Photonic crystals; Quantum well lasers; Tunable circuits and devices; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location :
Glasgow, Scotland
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517583
