DocumentCode :
2176288
Title :
Spontaneous recombination lifetime in compressively strained InGaAs quantum well lasers with InGaAsP and GaAs barrier/waveguide layers
Author :
Susaki, Wataru ; Ukawa, Soichiro
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
666
Lastpage :
669
Abstract :
Spontaneous carrier recombination lifetime increases with indium content in compressively strained InGaAs quantum well lasers grown on GaAs. It also becomes longer in lasers with wider bandgap InGaAsP barrier/waveguide layers by replacing the GaAs ones.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; internal stresses; quantum well lasers; InGaAsP; barrier-waveguide layers; compressively strained InGaAs quantum well lasers; indium content; spontaneous recombination lifetime; Gallium arsenide; Indium gallium arsenide; Laser transitions; Photonic band gap; Pulse measurements; Quantum well lasers; Radiative recombination; Temperature; Threshold current; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517584
Filename :
1517584
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2176288
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