DocumentCode
2176358
Title
A low noise operational amplifier design using subthreshold operation
Author
Lamb, Kaila G. ; Sanchez, Steven J. ; Holman, W. Timothy
Author_Institution
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Volume
1
fYear
1997
fDate
3-6 Aug 1997
Firstpage
35
Abstract
Subthreshold MOSFETs biased at 5 μA have been used to create scaleable, low noise, operational amplifiers. The operational amplifiers utilize input transistors operating in the subthreshold region and have been fabricated in two submicron CMOS processes. They demonstrate lower equivalent input noise voltage, more voltage headroom, and comparable or greater gain-bandwidth product than equivalent op amps operating strictly in saturation
Keywords
CMOS analogue integrated circuits; integrated circuit design; integrated circuit noise; operational amplifiers; 5 muA; low noise op amp design; low noise operational amplifiers; submicron CMOS processes; subthreshold MOSFETs; subthreshold operation; CMOS analog integrated circuits; CMOS process; Circuit noise; Integrated circuit noise; Low-noise amplifiers; MOSFETs; Operational amplifiers; Transconductance; Voltage; White noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location
Sacramento, CA
Print_ISBN
0-7803-3694-1
Type
conf
DOI
10.1109/MWSCAS.1997.666027
Filename
666027
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