Title :
A low noise operational amplifier design using subthreshold operation
Author :
Lamb, Kaila G. ; Sanchez, Steven J. ; Holman, W. Timothy
Author_Institution :
Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
Abstract :
Subthreshold MOSFETs biased at 5 μA have been used to create scaleable, low noise, operational amplifiers. The operational amplifiers utilize input transistors operating in the subthreshold region and have been fabricated in two submicron CMOS processes. They demonstrate lower equivalent input noise voltage, more voltage headroom, and comparable or greater gain-bandwidth product than equivalent op amps operating strictly in saturation
Keywords :
CMOS analogue integrated circuits; integrated circuit design; integrated circuit noise; operational amplifiers; 5 muA; low noise op amp design; low noise operational amplifiers; submicron CMOS processes; subthreshold MOSFETs; subthreshold operation; CMOS analog integrated circuits; CMOS process; Circuit noise; Integrated circuit noise; Low-noise amplifiers; MOSFETs; Operational amplifiers; Transconductance; Voltage; White noise;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Conference_Location :
Sacramento, CA
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.666027
