DocumentCode
2176777
Title
Impact of package inductance and DQ driver strength on the 3rd harmonic EMI from DRAM
Author
Lee, Junho ; Yoon, Dae-kun ; Kim, Hyunseok ; Jung, Booho ; Lee, Hyungdong ; Park, Kunwoo ; Kih, Joongsik
Author_Institution
Adv. Design Team, Hynix Semicond. Inc., Icheon, South Korea
fYear
2008
fDate
10-12 Dec. 2008
Firstpage
132
Lastpage
134
Abstract
This paper describes the impact of DRAM-caused power noise (especially simultaneous switching output noise) in DDR2 667 system. The power noise is regulated by adjusting the package inductance of power delivery nets, DQ driver strength, and the power supply voltage. The package inductances of core power delivery net (VDD/VSS) and the DQ power delivery net (VDDQ/ VSSQ) are controlled by adjusting the number of solder balls on package. Also, the DQ power noise is controlled by adjusting DQ driver strength. The power supply level adjusts to control both core and DQ power noises. In summary, DRAM power noise is closely related to the radiated emission, and DRAM power noise should be properly controlled to reduce EMI in digital system.
Keywords
DRAM chips; driver circuits; electromagnetic interference; inductance; integrated circuit noise; integrated circuit packaging; DDR2 667 system; DQ driver; DRAM; electromagnetic interference; package inductance; power delivery nets; power noise; simultaneous switching output noise; solder balls; third harmonic EMI; Control systems; Electromagnetic interference; Inductance; Noise level; Noise reduction; Packaging; Power supplies; Random access memory; Variable structure systems; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Packaging and Systems Symposium, 2008. EDAPS 2008. Electrical Design of
Conference_Location
Seoul
Print_ISBN
978-1-4244-2633-1
Electronic_ISBN
978-1-4244-2634-8
Type
conf
DOI
10.1109/EDAPS.2008.4736017
Filename
4736017
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