Title :
High-sensitivity measurement of particles on SOI wafers
Author :
Naruoka, H. ; Yoshida, Y. ; Iwamatsu, T. ; Yamaguchi, Y. ; Ipposhi, T. ; Yamamoto, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
In this report, it is found that particles on SOI wafers can be measured with high-sensitivity by inspection equipment with cell-to-cell image comparison. COPs were directly and non-destructively observed on SOI wafers for the first time by means of this measurement
Keywords :
inspection; silicon-on-insulator; surface contamination; COP; SOI wafer; Si; image comparison; inspection; nondestructive high-sensitivity measurement; particle contamination; Annealing; Counting circuits; Impurities; Inspection; Laser modes; Particle measurements; Pollution measurement; Time measurement; Ultra large scale integration; Wafer bonding;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634993
