F-inductor and BC-MOS technology for monolithic silicon RF ICs

Author

Kim, J.S. ; Park, C.H. ; Kim, S.H. ; Ryu, G.H. ; Seo, K.

Author_Institution

Dept. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

1998

fDate

11-8 June 1998

Firstpage

165

Lastpage

168

Abstract

A high performance spiral inductor and a RF-optimized MOSFET are developed for monolithic silicon RF application. The new inductor is made on the standard CMOS processed wafer using flip-chip bonding technology. Its floating-in-air structure enables to achieve more than 18 GHz resonant frequency at 4.8 nH inductance, as well as the good Q-factor. The RF-optimized MOSFET adopts the buried channel and the profiled junction structure for larger Gm and smaller C/sub GD/. The measurement results show the improvement of Gm by 30% and f/sub T/, by 45%, and the decrease of C/sub GD/ by 52%, compared with that of the conventional MOSFET.

Keywords

CMOS integrated circuits; UHF integrated circuits; elemental semiconductors; flip-chip devices; inductors; integrated circuit technology; silicon; 18 GHz; 3 GHz; BC-MOS technology; F-inductor technology; Q-factor; RF-optimized MOSFET; Si; buried channel structure; flip-chip bonding technology; floating-in-air structure; monolithic Si RF ICs; profiled junction structure; spiral inductor; standard CMOS processed wafer; CMOS process; CMOS technology; Inductance; Inductors; MOSFET circuits; Radio frequency; Resonant frequency; Silicon; Spirals; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682072

Filename

682072