Title :
F-inductor and BC-MOS technology for monolithic silicon RF ICs
Author :
Kim, J.S. ; Park, C.H. ; Kim, S.H. ; Ryu, G.H. ; Seo, K.
Author_Institution :
Dept. of Electr. Eng., Seoul Nat. Univ., South Korea
Abstract :
A high performance spiral inductor and a RF-optimized MOSFET are developed for monolithic silicon RF application. The new inductor is made on the standard CMOS processed wafer using flip-chip bonding technology. Its floating-in-air structure enables to achieve more than 18 GHz resonant frequency at 4.8 nH inductance, as well as the good Q-factor. The RF-optimized MOSFET adopts the buried channel and the profiled junction structure for larger Gm and smaller C/sub GD/. The measurement results show the improvement of Gm by 30% and f/sub T/, by 45%, and the decrease of C/sub GD/ by 52%, compared with that of the conventional MOSFET.
Keywords :
CMOS integrated circuits; UHF integrated circuits; elemental semiconductors; flip-chip devices; inductors; integrated circuit technology; silicon; 18 GHz; 3 GHz; BC-MOS technology; F-inductor technology; Q-factor; RF-optimized MOSFET; Si; buried channel structure; flip-chip bonding technology; floating-in-air structure; monolithic Si RF ICs; profiled junction structure; spiral inductor; standard CMOS processed wafer; CMOS process; CMOS technology; Inductance; Inductors; MOSFET circuits; Radio frequency; Resonant frequency; Silicon; Spirals; Wafer bonding;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682072
