DocumentCode :
2177056
Title :
Novel and low cost through silicon via solution for wafer scale packaging of image sensors
Author :
Humpston, G.
Author_Institution :
Tessera, Aylesbury, UK
fYear :
2008
fDate :
10-12 Dec. 2008
Firstpage :
179
Lastpage :
182
Abstract :
Solid state CMOS image sensor are being incorporated in an every increasing diversity of products. This paper presents a new TSV solution suitable for both single die and stacked die wafer-scale packages. So- called ´via-through-pad´ interconnects are a novel form of interconnect that superficially resemble a TSV but the differences are important and have profound implications for the product cost and reliability. Unusually, the materials of the package construction are sourced from outside the semiconductor industry. This is done to keep costs as low as possible. The process technology is wholly scaleable so the same tool set can be used irrespective of the wafer diameter. Data will be presented showing via-through-pad interconnects are able to surpass by a wide margin, the exacting reliability requirements of the automotive industry, both at the package and board level.
Keywords :
CMOS image sensors; automobile industry; automotive components; automotive electronics; integrated circuit interconnections; integrated circuit reliability; wafer level packaging; TSV solution; automotive industry; low cost packaging; package construction; product cost; product reliability; semiconductor industry; single die wafer-scale package; solid state CMOS image sensor; stacked die wafer-scale package; through silicon via solution; via-through-pad interconnects; wafer diameter; Building materials; CMOS image sensors; Costs; Electronics industry; Image sensors; Semiconductor device packaging; Semiconductor materials; Silicon; Solid state circuits; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging and Systems Symposium, 2008. EDAPS 2008. Electrical Design of
Conference_Location :
Seoul
Print_ISBN :
978-1-4244-2633-1
Electronic_ISBN :
978-1-4244-2634-8
Type :
conf
DOI :
10.1109/EDAPS.2008.4736029
Filename :
4736029
Link To Document :
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