Optimal extrinsic base fabrication for high performance SiGe HBTs for RF communication applications

Author

Tang, Ron ; Ford, Jenny ; Pryor, Bob ; Anandakugan, S. ; Welch, Pam ; Ginn, Kathy ; Burt, Curtis ; Yeung, Bruce ; Babcock, Jeff

Author_Institution

Commun. Products Lab., Motorola Inc., Mesa, AZ, USA

fYear

1997

fDate

5-8 May 1997

Firstpage

435

Lastpage

438

Abstract

SiGe HBTs with low 1/f noise, low base resistance (for low noise figure and high f_max) and high intrinsic gain and breakdown voltage provide design leverage for RF communication applications. This work describes an optimal extrinsic base fabrication for SiGe HBTs, achieving f_max increased 2 times, R_B reduced 50%, noise figure at 900 MHz reduced about 0.5 dB, 1/f noise reduced 10 times, and current gain increased 2 times. Breakdown voltage V_CEO is larger than 8.0 V, sufficient for 3 V operations. Those results have been achieved at no additional mask or process steps to the conventional base-line process

Keywords

1/f noise; Ge-Si alloys; UHF bipolar transistors; UHF integrated circuits; heterojunction bipolar transistors; integrated circuit technology; semiconductor device noise; semiconductor materials; 3 V; 900 MHz; RF communication applications; SiGe; high breakdown voltage; high intrinsic gain; high performance SiGe HBTs; low 1/f noise; low base resistance; optimal extrinsic base fabrication; Boron; Breakdown voltage; Etching; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Noise figure; Radio frequency; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1997., Proceedings of the IEEE 1997

Conference_Location

Santa Clara, CA

Print_ISBN

0-7803-3669-0

Type

conf

DOI

10.1109/CICC.1997.606661

Filename

606661