GaInP/GaAs HBT broadband monolithic transimpedance amplifiers and their high frequency small and large signal characteristics

Author

Jae-Woo Park ; Mohammadi, S. ; Pavlidis, D. ; Dua, C. ; Guyaux, J.L. ; Garcia, J.-C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1998

fDate

11-8 June 1998

Firstpage

179

Lastpage

182

Abstract

Monolithic broadband transimpedance amplifiers were developed using GaInP/GaAs single HBTs. The HBTs showed a cut off frequency (f/sub T/) of 60 GHz and maximum oscillation frequency (f/sub max/) of 100 GHz. The fabricated amplifiers had a maximum bandwidth of 19 GHz and an associated transimpedance gain of 47 dB/spl Omega/. The large signal characteristics of two transimpedance amplifier designs with similar gain were also investigated and showed that the cascode approach is much less sensitive to input power level.

Keywords

HF amplifiers; III-V semiconductors; bipolar analogue integrated circuits; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; wideband amplifiers; 100 GHz; 19 GHz; 60 GHz; GaInP-GaAs; GaInP/GaAs HBT broadband monolithic transimpedance amplifier; cascode design; cut off frequency; gain; high frequency characteristics; large signal characteristics; maximum oscillation frequency; small signal characteristics; Broadband amplifiers; Chemical technology; Degradation; Etching; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical receivers; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682075

Filename

682075